Electronic properties of osmium disilicide

被引：15
|
作者：
Filonov, AB [1 ]
Migas, DB [1 ]
Shaposhnikov, VL [1 ]
Dorozhkin, NN [1 ]
Borisenko, VE [1 ]
Lange, H [1 ]
机构：
[1] HAHN MEITNER INST BERLIN GMBH, DEPT PHOTOVOLTA, D-12489 BERLIN, GERMANY
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 08期
关键词：
D O I：
10.1063/1.118453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electronic property calculation of OsSi2 performed by the linear muffin-tin orbital method within the local density approximation scheme has shown the material to be an indirect gap semiconductor with a gap value of 0.95 eV. A direct transition with appreciable oscillator strength at 1.14 eV is predicted. (C) 1997 American Institute of Physics.
引用
收藏
页码：976 / 977
页数：2
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