A 460-GHz CMOS substrate-integrated-waveguide slot-antenna design

被引：6

作者：

Xie, Hao ^{[1
]}

Belostotski, Leonid ^{[1
]}

Okoniewski, Michal ^{[1
]}

机构：

[1] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB, Canada

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2016年 / 58卷 / 02期

关键词：

substrate-integrated-waveguide; CMOS; slot antenna; terahertz;

D O I：

10.1002/mop.29570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A design of a 460 GHz substrate-integrated-waveguide (SIW) slot antenna in a 65-nm CMOS process is presented in thisarticle. The size of the antenna is 380 m x 224 m. An inductor identification layer is placed in the layout to reduce the internal metal density requirements significantly. The proposed antenna, which includes metal dummy fill to be compliant with the 65 nm process design rules, was simulated using HFSS. The antenna simulated with a 0.5 mm Si substrate has a maximum gain of 0.09 dBi and a radiation efficiency of 29.1%. The bandwidth of S-11 below -10 dB is 25.3 GHz. (c) 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:347-351, 2016

引用

页码：347 / 351

页数：5

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