Finite-Elements Simulation Of Etch Front Propagation In Silicon Electropolishing Process

Finite-elements simulation of etch front propagation during the process of electrochemical etching of silicon in electropolishing regime is presented. Electrical and diffusion models are developed and simulations are compared to experimental results. A general electrochemical model is proposed. It is shown, that the mechanism of shape transformation of the etch form from convex to concave during the process for the applied conditions is due to diffusion transport of reactants in electrolyte. Limitations of the presented models are discussed.