Effect of processing parameters on structure of pulsed laser deposited La0.5Sr0.5CoO3 thin films

La0.5Sr0.5CoO3 thin films on Si(100) have been prepared using pulsed laser deposition by varying processing parameters to derive a controlled growth of films. If the energy density of the laser is appropriately chosen, films with (100) preferred orientation may form. Pronounced (110)-oriented films were grown when the substrate temperature is about 300 to 450 degrees C and the intensity of (m00) peaks increases as the substrate temperature increases. However, the films become polycrystalline when the temperature is above 700 degrees C. If oxygen partial pressure is controlled below 0.3 mbar, textured films with higher (100) intensity can be derived. Under optimal deposition condition, an excellent (100)-textured La0.5Sr0.5CoO3 film on Si(100) will be produced, and consequently a well-oriented ferroelectric Pb0.6Sr0.4TiO3 film will be derived.