Aligned MoO2/MoS2 and MoO2/MoTe2 Freestanding Core/Shell Nanoplates Driven by Surface Interactions

被引:15
|
作者
DeGregorio, Zachary P. [1 ]
Yoo, Youngdong [1 ]
Johns, James E. [1 ]
机构
[1] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
来源
关键词
CHEMICAL-VAPOR-DEPOSITION; METAL DICHALCOGENIDE ALLOYS; HIGH-QUALITY MONOLAYER; 2-DIMENSIONAL MATERIALS; ELECTRONIC-PROPERTIES; SIC SURFACES; MOS2; GROWTH; HETEROSTRUCTURES; OPTOELECTRONICS;
D O I
10.1021/acs.jpclett.7b00307
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Controlling the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is an important step toward utilizing these materials for either electronics or catalysis. Here, we report a new surface-templated growth method that enables the fabrication of MoO2/MoS2 and MoO2/MoTe2 core/shell nanoplates epitaxially aligned on (0001)-oriented 4H-silicon carbide and sapphire substrates. These heterostructures are characterized by a variety of techniques to identify the chemical and structural nature of the interface. Scanning electron microscopy shows that the nanoplates feature 3-fold symmetry indicative of epitaxial growth. Raman spectroscopy indicates that the MoO2/MoS2 nanoplates composed of co-localized MoO2 and MoS2, and transmission electron microscopy confirms that the nanoplates feature MoO2 cores with 2D MoS2 coatings. Locked-coupled X-ray diffraction shows that the interfacial planes of the MoO2 nanoplate cores belong to the {010} and {001} families. This method may be further generalized to create novel nanostructured interfaces with single-crystal substrates.
引用
收藏
页码:1631 / 1636
页数:6
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