Theoretical Analysis of Substrate Effects on the DC Performance of AlGaN/GaN High Electron Mobility Transistor

被引：0

作者：

Islam, Abu Syed Md. Jannatul ^{[1
]}

Hasanuzzaman, S. M. ^{[1
]}

Podder, Amit Kumer ^{[1
]}

Islam, Md. Sherajul ^{[1
]}

Bhuiyan, Ashraful Ghani ^{[1
]}

机构：

[1] Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna, Bangladesh

来源：

2016 5TH INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS AND VISION (ICIEV) | 2016年

关键词：

HEMT; Substrate; 2DEG; Transconductance; Self-heating; VOLTAGE CHARACTERISTICS; ANALYTICAL-MODEL; HEMTS; TEMPERATURE; CAPACITANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the theoretical analysis of substrate (Sapphire, Si, SiC, Diamond) effects on the saturation drain current and transconductance of Al.27Ga.73N/GaN high-electron mobility transistor using analytical approach. This model includes polar optical phonon scattering, source-drain resistance and self-heating effects with a wide temperature ranges. It is found that substrates have significant effects on the dc performance of AlGaN/GaN HEMT. The model reports very good performance of HEMT fabricated on Diamond substrate due to its excellent thermal conductivity properties and a comparative analysis of the performance on different substrates at high voltage level is presented.

引用

页码：961 / 966

页数：6

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