Er,Yb:GdAl3(BO3)4 Laser Passively Q-switched by MBE-grown Cr:ZnS Thin Films

被引：0
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作者：
Gorbachenya, K. N. [1 ]
Kisel, V. E. [1 ]
Yasukevich, A. S. [1 ]
Tolstik, N. [2 ]
Karhu, E. [2 ]
Furtula, V. [2 ]
Sorokin, E. [3 ]
Maltsev, V. V. [4 ]
Leonyuk, N. I. [4 ]
Galinis, A. [5 ]
Lipinskas, T. [5 ]
Gibson, U. [2 ]
Sorokina, I. T. [2 ]
Kuleshov, N. V. [1 ]
机构：
[1] Belarusian Natl Tech Univ, Ctr Opt Mat & Technol, 65-17Nezavisimosti Ave, Minsk, BELARUS
[2] Norwegian Univ Sci & Technol, Dept Phys, Hogskoleringen 5, N-7491 Trondheim, Norway
[3] Vienna Univ Technol, Photon Inst, Gusshausstr 27-387, A-1040 Vienna, Austria
[4] Moscow MV Lomonosov State Univ, Dept Crystallog & Crystal Chem, GSP 2, Moscow 119992, Russia
[5] UAB Optogama, Mokslininku Str 2A, LT-08412 Vilnius, Lithuania
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC) | 2017年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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