Modified EAM potentials for modelling stacking-fault behavior in Cu, Al, Au, and Ni

被引:10
|
作者
Szelestey, P
Patriarca, M
Perondi, LF
Kaski, K
机构
[1] Aalto Univ, Lab Computat Engn, Helsinki 02015, Finland
[2] Inst Nacl Pesquisas Espaciais, BR-12227010 Sao Jose Dos Campos, Brazil
来源
基金
芬兰科学院;
关键词
D O I
10.1142/S0217979202011226
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we have developed empirical Embedded Atom Model potentials, following the fitting scheme proposed by Chantasiriwan and Milstein, in order to describe the stacking fault behaviour of copper, gold, nickel and aluminium. We show that the potentials based on this scheme can be modified to provide reasonable stacking-fault energy values and consequently a better description of the plastic properties. Modifications were done by changing the cut-off distance in case of aluminium and nickel, and in case of gold and copper by also modifying the functional form of the pair-potential. In order to validate these modified potentials we have tested them by studying various properties, such as structural, defect, and surface energies, and phonon spectra and comparing results with those from experiments and other model potentials.
引用
收藏
页码:2823 / 2835
页数:13
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