A second generation MEMS surface fence sensor for high resolution wall shear stress measurement

被引：18
|
作者：
von Papen, T [1 ]
Buder, U [1 ]
Ngo, HD [1 ]
Obermeier, E [1 ]
机构：
[1] Tech Univ Berlin, MAT Sekr TIB 3 1, D-13355 Berlin, Germany
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2004年 / 113卷 / 02期
关键词：
MEMS; surface fence; wall shear stress;
D O I：
10.1016/j.sna.2004.01.058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The measurement of the wall shear stress in fluid mechanics has important implications for the investigation of turbulent flow phenomena. An advanced version of the MEMS silicon surface fence sensor that measures this stress is presented herein. This sensor consists of a cantilever structure with a length of 5 mm, a height of 315 mum, and a thickness of 10 mum. Fluid flowing towards this structure causes it to bend. The resulting bending stress in the cantilever is measured with four piezoresistors, and this stress is correlated to the wall shear stress. The offset voltage has been reduced significantly. The sensor operates over a range of approximately - 1 to + 1 N/m(2) with a resolution of 10 mN/m(2). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：151 / 155
页数：5
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