Vectorial growth of metallic and semiconducting single-wall carbon nanotubes

被引:215
|
作者
Joselevich, E [1 ]
Lieber, CM
机构
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
关键词
D O I
10.1021/nl025642u
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new approach for vectorial growth of single-wall carbon nanotube arrays is presented. The origin of growth is defined by patterning the catalyst nanoparticles, while the direction of growth is defined by a local electric field parallel to the substrate. Statistical analysis of the nanotube angular distribution indicates that field-directed growth can discriminate between metallic and semiconducting nanotubes during their formation. Vectorial growth could be used to produce nanotube-based circuitry for molecular electronics.
引用
收藏
页码:1137 / 1141
页数:5
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