Electrical, Structural and Optical Properties of Tellurium Thin Films on silicon Substrate

被引：4
|
作者：
Arora, Swati [1 ,2 ]
Vijay, Y. K. [2 ]
机构：
[1] Swami Keshvanand Inst Technol Management & Gramot, Jaipur 302017, Rajasthan, India
[2] Vivekananda Global Univ, Dept Phys, Jaipur 302012, Rajasthan, India
来源：
2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017) | 2018年 / 1953卷
关键词：
D O I：
10.1063/1.5032418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tellurium (Te) thin films of various thicknesses (200nm, 275nm, 350nm & 500nm) were prepared on Silicon (Si) using thermal evaporation at vacuum of 10(-5) torr. It is observed that the resistivity decreases exponentially with the Increases Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the band gap will exponentially decreases. Samples were analysed through X-ray diffraction and atomic force microscopy to attain complete and reliable micro structural in order.
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页数：5
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