Electrokinetic-Fenton remediation of organochlorine pesticides from historically polluted soil

被引:20
|
作者
Ni, Maofei [1 ,2 ]
Tian, Shulei [3 ]
Huang, Qifei [3 ]
Yang, Yanmei [4 ]
机构
[1] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Chinese Res Inst Environm Sci, Res Inst Solid Waste Management, Beijing 100012, Peoples R China
[4] Chongqing Jiaotong Univ, Sch River & Ocean Engn, Chongqing 400074, Peoples R China
基金
中国国家自然科学基金;
关键词
Electrokinetic-Fenton; POPs; Soil remediation; Real polluted soil; HEAVY-METALS; REMOVAL; OXIDATION; CYCLODEXTRIN; PHENANTHRENE; DEGRADATION; HEXACHLOROBENZENE; OXYFLUORFEN; ADSORPTION; DIFFUSION;
D O I
10.1007/s11356-018-1479-3
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Soil contamination by persistent organic pollutants (POPs) poses a great threat to historically polluted soil worldwide. In this study, soils were characterized, and organochlorine pesticides contained in the soils were identified and quantified. Individual electrokinetic (IE), EK-Fenton-coupled technologies (EF), and enhanced EK-Fenton treatment (E-1, E-2, and E-3) were applied to remediate soils contaminated with hexachloro-cyclohexane soprocide (HCH) and dichloro-diphenyl-trichloroethane (DDT). Variation of pH, electrical conductivity, and electroosmotic flow was evaluated during the EK-Fenton process. The IE treatment showed low removal efficiency for HCHs (30.5%) and DDTs (25.9%). In the EF treatment, the highest removal level (60.9%) was obtained for alpha-HCH, whereas P,P-DDT was the lowest (40.0%). Low solubility of pollutants impeded the HCH and DDT removal. After enhanced EK-Fenton treatment, final removal of pollutants decreased as follows: beta-HCH (82.6%) > gamma-HCH (81.6%) > alpha-HCH (81.2%) > delta-HCH (80.0%) > P,P-DDD (73.8%) > P,P-DDE (73.1%) > P,P-DDT (72.6%) > O,P-DDT (71.5%). The results demonstrate that EK-Fenton is a promising technology for POP removal in historically polluted soil.
引用
收藏
页码:12159 / 12168
页数:10
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