Single-photon quantum efficiency of Geiger-mode InGaAs/InP avalanche photodiodes

被引：0
|
作者：
Forsyth, K [1 ]
Dries, JC [1 ]
机构：
[1] Sensors Unlimited, Princeton, NJ 08540 USA
来源：
SEMICONDUCTOR PHOTODETECTORS | 2004年 / 5353卷
关键词：
quantum efficiency; photon counting; Geiger mode; InGaAs; InP; APD;
D O I：
10.1117/12.532884
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The single-photon detection efficiency of various commercial InGaAs/InP avalanche photodiodes (APDs) operated in the Geiger mode has been reported previously. These studies showed substantial photon detection efficiency variation between individual devices, but did not indicate what device parameters might be responsible for this variation. We present data on the external single-photon detection efficiency of APDs operated as near-infrared single photon counters, and show how detection efficiency is related to both device design and operating conditions. We have fabricated APDs with near-infrared single-photon detection efficiency exceeding 50% at 10% excess bias, demonstrating that InGaAs/InP APDs of the proper design are well suited to many practical applications of photon counting in the 1.0 to 1.7 micron wavelength band.
引用
收藏
页码：72 / 80
页数：9
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