Resistance switching properties of epitaxial Pr0.7Ca0.3MnO3 thin films with different electrodes

被引:7
|
作者
Lau, H. K. [1 ]
Leung, C. W.
Chan, Y. K.
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
关键词
WORK FUNCTION;
D O I
10.1002/pssa.200881782
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resistance switching effect caused by external electric field was investigated in Pr0.7Ca0.3MnO3 (PCMO) thin films grown on (001)-oriented LaAlO3, by using different metallic (Al, Pt, Au, Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistance changes upon reversing voltage polarities. Nonlinear, hysteretic current-voltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in non-volatile memory devices. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2182 / 2186
页数:5
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