Carrier trapping due to Fe3+/Fe2+ in InP

被引：0
|
作者：
Soderstrom, D
Marcinkevicius, S
Karlsson, S
Lourdudoss, S
机构：
来源：
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1997年
关键词：
D O I：
10.1109/ICIPRM.1997.600181
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time-resolved photoluminescence studies were performed on epitaxially grown InP either doped with iron or codoped with iron and sulphur to gain information on carrier trapping characteristics of Fe3+/Fe2+. The carrier trapping time was found to be dependent on iron concentration in InP:Fe and both, iron and sulphur concentrations in InP:Fe,S. From the measured trapping times in both InP:Fe and InP:Fe,S the electron and hole capture cross sections of the Fe deep levels are determined as sigma(e) = 1x10(-15) cm(2) and sigma(h) = 6x10(-15) cm(2), respectively. From the derived capture cross sections and the measured trapping times, the concentration of the different iron species is calculated in both, InP:Fe and InP:Fe,S. It reveals that the active iron concentration (Fe3+) exceeds 1x10(18) cm(-3) for the highest total iron doping concentrations in InP:Fe.
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页码：412 / 415
页数：4
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