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Spin-orbit torques in structures with asymmetric dusting layers
被引:15
|作者:
Razavi, Armin
[1
]
Wu, Hao
[1
]
Dai, Bingqian
[1
]
He, Haoran
[1
]
Wu, Di
[1
]
Wong, Kin
[1
]
Yu, Guoqiang
[2
]
Wang, Kang L.
[1
]
机构:
[1] Univ Calif Los Angeles, Dept Elect & Comp Sci, Los Angeles, CA 90095 USA
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
基金:
中国国家自然科学基金;
美国国家科学基金会;
北京市自然科学基金;
关键词:
PERPENDICULAR MAGNETIZATION;
FIELD;
ELECTRONS;
SYMMETRY;
D O I:
10.1063/5.0029347
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Current-induced spin-orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H-z(eff)). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H-z(eff); we show that H-z(eff) is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H-z(eff) enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.
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页数:7
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