Transport Properties of Calcium Doped YMnO3 Thin Film

被引：5
|
作者：
Rathod, K. N. [1 ]
Gadani, Keval [1 ]
Joshi, Zalak [1 ]
Dhruv, Davit [1 ]
Joshi, A. D. [2 ]
Asokan, K. [3 ]
Solanki, P. S. [1 ]
Shah, N. A. [1 ]
机构：
[1] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India
[2] Saurashtra Univ, Dept Nanosci & Adv Mat, Rajkot 360005, Gujarat, India
[3] Inter Univ Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 03期
关键词：
Manganite; Transport; YMnO3; Thin film; Backward diode; DEPENDENT TRANSPORT; MAGNETOTRANSPORT; BEHAVIOR;
D O I：
10.1016/j.matpr.2017.10.170
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
YMnO3 thin film, doped with Ca at Y-site, was grown on n-type single crystalline Si substrate using pulsed laser deposition (PLD) technique. The structural measurement using X-ray diffraction (XRD) shows single phasic hexagonal unit cell structure. From d-spacing, calculated lattice strain is observed to be compressive in nature. Atomic force microscopy (AFM) was employed to study morphology of the film surface. The current-voltage characteristic exhibits a strong dependence on temperature. Space charge limited conduction (SCLC) mechanism has been best fitted to I-V results owing to the important role of trap centers. An efficient normal to backward diode behavior transition has been observed with increase in temperature. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：9804 / 9810
页数：7
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