Electrical spin injection from Fe into GaAs at room temperature

被引：9
|
作者：
Ramsteiner, A [1 ]
Zhu, HJ [1 ]
Schönherr, HP [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
spin injection; ferromagnetic metal; III-V semiconductor; electroluminescence;
D O I：
10.1016/S1386-9477(02)00187-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Injection of spin-polarized electrons is observed at a ferromagnet-semiconductor interface by analyzing the electroluminescence signal of a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the light emission at room temperature reveals a spin injection efficiency of at least 2% from Fe into GaAs. The underlying injection mechanism is explained in terms of a tunneling process. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：529 / 532
页数：4
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