Metal-insulator transition in a doubly orbitally degenerate model with correlated hopping

被引:18
|
作者
Didukh, L [1 ]
Skorenkyy, Y [1 ]
Dovhopyaty, Y [1 ]
Hankevych, V [1 ]
机构
[1] Ternopil State Tech Univ, Dept Phys, UA-46001 Ternopil, Ukraine
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 12期
关键词
D O I
10.1103/PhysRevB.61.7893
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present paper, we propose a doubly orbitally degenerate narrow-band model with correlated hopping. The peculiarity of the model is taking into account the matrix element of electron-electron interaction, which describes intersite hoppings of electrons. In particular, this leads to the concentration dependence of the effective hopping integral. The cases of the strong and weak Hund's coupling are considered. By means of a generalized mean-field approximation the single-particle Green function and quasiparticle energy spectrum are calculated. Metal-insulator transition is studied in the model at different integer values of the electron concentration. With the help of the obtained energy spectrum, we find energy gap width and criteria of metal-insulator transition.
引用
收藏
页码:7893 / 7908
页数:16
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