Indium tailors the leakage current and voltage gradient of multiple dopant-based ZnO varistors

In the present study, the effect of indium doping on the micro-characteristics and electrical properties of ZnO varistors co-doped with Al2O3 and Y2O3 were determined. Scanning electron microscopy, current-voltage testing in a range from small to large current, capacitance-voltage testing, and X-ray diffraction pattern testing were conducted. The results show that both the residual voltage ratio and the leakage current of sintered ZnO varistors decrease and then increase as the indium dopant increases at a given aluminum and yttrium content. The nonlinear coefficient shows an inverse relationship. In addition, the voltage gradient of the samples increases as the indium dopant increases. The sintered ZnO varistor samples with 0.02 mol% indium, 0.2 mol% aluminum, and 0.9 mol% yttrium show the optimal performance, exhibiting a 1-mA residual voltage of 448 V/ mm, a leakage current of 0.69 mu A/cm(2), a nonlinear coefficient of 76, and a residual voltage ratio of 1.58. This study has great significance for improving the protective effects of surge protection devices assembled with ZnO varistors and the stability of power systems.