Fabrication of silicon pyramid/nanowire binary structure with superhydrophobicity

被引:49
|
作者
Li, Xiaocheng [1 ]
Tay, Beng Kang [1 ]
Miele, Philippe [2 ]
Brioude, Arnaud [2 ]
Cornu, David [2 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Univ Lyon 1, Lab Multimat & Interfaces, CNRS, UMR 5615, F-69622 Villeurbanne, France
关键词
Silicon; Pyramid/nanowire binary structure; Superhydrophobicity; Contact angle hysteresis; Binary roughness; NANOWIRE ARRAYS; SURFACES; GROWTH; LOTUS;
D O I
10.1016/j.apsusc.2009.03.047
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A pyramid/nanowire binary structure is fabricated on the silicon surface via a NaOH anisotropic etching technique followed by a silver-catalyzed chemical etching process. The silicon surface shows a stable superhydrophobicity with high contact angle of 1628 and small sliding angle less than 28 after being modified with octadecyltrichlorosilane (ODTS). The binary roughness of pyramid/nanowire structure presents a stable composite interface of silicon-air-water and responsible for the superhydrophobicity of silicon surface. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码:7147 / 7152
页数:6
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