Reproducible lateral force microscopy measurements for quantitative comparisons of the frictional and chemical properties of nanostructures

被引:20
|
作者
Such, MW [1 ]
Kramer, DE [1 ]
Hersam, MC [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
lateral force microscopy; nanolithography; silicon; oxidation;
D O I
10.1016/j.ultramic.2003.12.005
中图分类号
TH742 [显微镜];
学科分类号
摘要
Atomic force microscopy (AFM) is a widely used technique for characterizing the topography and frictional properties of nanostructures. Inherent misalignments between the AFM cantilever and the feedback hardware lead to crosstalk between topography data and lateral force microscopy (LFM) data. Because the degree of crosstalk depends on the positioning of the cantilever, LFM and topography data of the same structure can vary from one experiment to the next. For nanostructures with large LFM contrast, errors as large as 50% in topography and LFM can be observed. This paper describes an empirical strategy for correcting this alignment error. The technique is used to characterize the frictional properties of scanning probe-induced oxide nanostructures and the hydrogen-terminated Si(1 1 1) surfaces on which they are patterned. Reproducible differences in the frictional properties of the oxide nanostructures patterned on HF-treated and NH4F-treated Si(1 1 1) Surfaces are observed and attributed to the mixed-hydride versus monohydride termination of each surface. The observed frictional contrast is consistent with known differences in surface reactivity and demonstrates how LFM measurements can provide insight into the frictional and chemical properties of nanostructures (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:189 / 196
页数:8
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