General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors

被引：1

作者：

Khan, Arif ^{[1
]}

Das, Atanu ^{[2
]}

机构：

[1] Electrocom Corp, Potomac, MD 20859 USA

[2] Vidyasagar Univ, Dept Phys & Technol Phys, Midnapore 721102, W Bengal, India

来源：

ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES | 2009年 / 64卷 / 3-4期

关键词：

Semiconductors; Diffusivity; Mobility; MINORITY-CARRIER TRANSPORT; FERMI-DIRAC INTEGRALS; EINSTEIN RELATION; DEGENERATE SEMICONDUCTORS; ELECTRICAL CHARACTERISTICS; DISORDERED SEMICONDUCTORS; THEORETICAL-ANALYSIS; ACTIVITY-COEFFICIENT; CONTACT MECHANISMS; GAP SEMICONDUCTORS;

D O I：

10.1515/zna-2009-3-414

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

引用

页码：257 / 262

页数：6

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