Dopant effects to pores in ZnO varistors

被引：0

作者：

Tu, Youping ^{[1
]}

Ding, Lijian ^{[1
]}

He, Jinliang

Hu, Jun

Han, Se-Won ^{[2
]}

Cho, Han-Goo ^{[2
]}

机构：

[1] North China Elect Power Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 102206, Peoples R China

[2] Korea ElectroTechnol Res Inst, Div Elect Mat, Chang Won, South Korea

来源：

ICPASM 2005: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 AND 2 | 2006年

关键词：

pore; ZnO varistor; additive; intrinsic property;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pore is an intrinsic property of ZnO varistor. There are two different shapes of pores in ZnO varistor samples, one is sphere shape, and another is irregular polyhedron. Pores are caused by air particles wrapped in initial varistor compact and grains-surrounded spaces during the sintering. By analyzing the pore phenomena in two different systems of ZnO varistors, we observed the pore ratio decreases, pores with large size are formed, and the pores inside ZnO grains decreases with the increase of the amount of Al2O3 additives, which are caused by the pinning effect of spinel formed by additives. The pores are possibly related to grain growth inhibition by dragging effects.

引用

页码：967 / +

页数：2

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