Low-temperature processing of inkjet-printed IZO thin-film transistors

被引：8

作者：

Lee, Jun Seok ^{[1
]}

Choi, Woon-Seop ^{[1
]}

机构：

[1] Hoseo Univ, Dept Display Engn, Asan 336795, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2014年 / 64卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Inkjet; Low-temperature process; Indium-zinc-oxide (IZO); Thin-film transistor (TFT);

D O I：

10.3938/jkps.64.701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Inkjet-printed indium-zinc oxide (IZO) thin-film transistors (TFTs) were prepared at a processing temperature of 200 A degrees C for the first time. The formulation of the inkjet solution and the process optimization resulted in a mobility of 0.45 cm(2)/Vs, a threshold voltage of 7 V, an on-to-off current ratio of 10(5) and a subthreshold slope of 0.5 V/dec at the low annealing temperature of 200 A degrees C, the best properties in the inkjet process thus far. The metal-oxide formation at 200 A degrees C was confirmed by using X-ray photoelectron Spectroscopy. The bias stability of an inkjet-printed IZO TFT at 200 A degrees C was also characterized.

引用

页码：701 / 705

页数：5

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