5 Watt GaN HEMT Power Amplifier for LTE

被引：0
|
作者：
Niotaki, Kyriaki [1 ]
Collado, Ana [1 ]
Georgiadis, Apostolos [1 ]
Vardakas, John [2 ]
机构：
[1] CTTC, Castelldefels 08860, Spain
[2] Iquadrat SL, Barcelona 08009, Spain
来源：
RADIOENGINEERING | 2014年 / 23卷 / 01期
关键词：
ACPR; GaN HEMT; linearity; LTE; PAPR; power amplifier;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).
引用
收藏
页码：338 / 344
页数：7
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