Effect of ultrasonic treatment on the mobility of short dislocations in Si crystals

被引：7
|
作者：
Ostrovskii, IV [1 ]
Steblenko, LP [1 ]
Nadtochii, AB [1 ]
机构：
[1] Shevchenko Natl Univ, UA-252017 Kiev, Ukraine
来源：
PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 03期
关键词：
Spectroscopy; Activation Energy; State Physics; Mechanical Load; Compressive Force;
D O I：
10.1134/1.1131236
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of ultrasonic treatment on the mobility of short surface dislocations in Si crystals is investigated. It is found that ultrasonic treatment of Si crystals changes the velocity of dislocations under a permanent mechanical load. The nature of variation of dislocation velocity is determined by the sign of external stresses acting on the sample: compressive forces decrease while tensile forces increase the velocity of dislocations. After ultrasonic treatment of the samples, a decrease in the activation energy for dislocation motion and the enhancement of the electroplastic effect are observed. A possible mechanism of the observed effects is considered. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：488 / 491
页数：4
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