Ka-band RF MEMS phase shifters

被引:89
|
作者
Pillans, B [1 ]
Eshelman, S [1 ]
Malczewski, A [1 ]
Ehmke, J [1 ]
Goldsmith, C [1 ]
机构
[1] Raytheon Syst Co, Dallas, TX 75266 USA
来源
关键词
K alpha-band; MMIC; phase shifter; RF MEMS;
D O I
10.1109/75.819418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As the need for low-loss phase shifters increases, so does the interest in radio frequency (RF) MEMS as a solution to provide them. In this paper, progress in building low loss Ka-band phase shifters using RF MEMS capacitive switches is demonstrated. Using a switched transmission line 4-bit resonant phase shifter, an average insertion loss of 2.25 dB was obtained with better than 15-dB return loss. A similar 3-bit phase shifter produced an average insertion loss of 1.7 dB with better than 13 dB return loss. Both devices had a phase error of Less than 13 degrees in the fundamental states. To our knowledge, these devices represent the lowest loss Ka-band phase shifters reported to date.
引用
收藏
页码:520 / 522
页数:3
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