We investigated the coercive field H-c for domain wall (DW) motion as a function of the current I in the ferromagnetic oxide SrRuO3, a model system with narrow DWs for fabricating high-density spintronics devices. The DW is moved by I in the direction of the current, and H-c is modulated linearly in I. This linear relationship is consistent with an effective magnetic field H-eff driving the DW. The direction of DW motion and the magnitude of H-eff are well described by a model based on the field-like torque arising from the spin relaxation of conduction electrons in the DW.
机构:
Inst Teknol Bandung, Fac Math & Nat Sci, Jalan Ganesha 10, Bandung 40132, IndonesiaUniv Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany
机构:
Inst Teknol Bandung, Fac Math & Nat Sci, Jalan Ganesha 10, Bandung 40132, IndonesiaUniv Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany