Thermoelectric films prepared by pulsed laser deposition

被引：4
|
作者：
Dauscher, A [1 ]
Lenoir, B [1 ]
Boffoué, O [1 ]
Jacquot, A [1 ]
机构：
[1] Ecole Mines, Phys Mat Lab, UMR CNRS, UHP,INPL 7556, F-54042 Nancy, France
来源：
ALT'01 INTERNATIONAL CONFERENCE ON ADVANCED LASER TECHNOLOGIES | 2002年 / 4762卷
关键词：
pulsed laser deposition; thin films; thermoelectric properties; Bi; Bi2Te3; PbTe;
D O I：
10.1117/12.478665
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thermoelectric thin films have been prepared by pulsed laser deposition (PLD) from a Nd:YAG laser. Materials include bismuth (Bi), bismuth telluride (Bi2Te3), and lead telluride (PbTe). The influence of various deposition parameters (substrate temperature, substrate nature, ...) on the achievement of high quality stoichiometric films is discussed. Results of transport property measurements (electrical resistivity, thermoelectric power, Hall coefficient) are attempted to be correlated to the film microstructure. Some particular features relevant to each material (problems of non-congruent transfer of stoichiometry, particular thickness profiles, ...) are highlighted.
引用
收藏
页码：52 / 63
页数：12
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