Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs

被引：1
|
作者：
Kneissl, Michael [1 ,2 ]
Rass, Jens [1 ]
Schade, Lukas [3 ]
Schwarz, Ulrich T. [4 ]
机构：
[1] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany
[2] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany
[3] Univ Freiburg, Dept Microsyst Engn, D-79108 Freiburg, Germany
[4] Tech Univ Chemnitz, Fac Nat Sci, D-09126 Chemnitz, Germany
来源：
III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION | 2017年 / 133卷
关键词：
LIGHT-EMITTING-DIODES; A-PLANE GAN; GALLIUM NITRIDE FILMS; HIGH-POWER; OUTPUT-POWER; BLUE; SAPPHIRE; POLARIZATION; GREEN; ELECTROLUMINESCENCE;
D O I：
10.1007/978-981-10-3755-9_5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：93 / 128
页数：36
相关论文
共 50 条
  • [1] Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
    Kneissl, Michael
    Rass, Jens
    Schade, Lukas
    Schwarz, Ulrich T.
    [J]. III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2013, 126 : 83 - 119
  • [2] Progress in nonpolar and semipolar GaN-based LEDs and laser diodes
    Speck, James
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2013, 246
  • [3] Recent performance of nonpolar/semipolar GaN-based blue LEDs/LDs
    Nakamura, S.
    DenBaars, S. P.
    Speck, J. S.
    Schmidt, M. C.
    Kim, K-C
    Farrell, R. M.
    Feezell, D. F.
    Cohen, D. A.
    Saito, M.
    Sato, H.
    Asamizu, H.
    Tyagi, A.
    Zhong, H.
    Masui, H.
    Fellows, N. N.
    Iza, M.
    Hashimoto, T.
    Fujito, K.
    [J]. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 898 - +
  • [4] Effect of Varied Undoped GaN Thickness on ESD and Optical Properties of GaN-Based LEDs
    Chiang, Tsung-Hsun
    Wang, Chun-Kai
    Chang, Shoou-Jinn
    Chiou, Yu-Zung
    Ko, Tsun-Kai
    Lin, Tien-Kun
    Chang, Sheng-Po
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (10) : 800 - 802
  • [5] Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates
    Xiang, Wenci
    Sun, Hao
    Wang, Sibo
    Zhou, Huilian
    Shuai, Lingxiao
    Ye, Yunxia
    Zhang, Yun
    [J]. Faguang Xuebao/Chinese Journal of Luminescence, 2024, 45 (04): : 681 - 687
  • [6] Optical design of large area GaN-based LEDs
    Zheng, RS
    Taguchi, T
    [J]. LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII, 2003, 4996 : 105 - 112
  • [7] Interface and transport properties of GaN/graphene junction in GaN-based LEDs
    Wang, Liancheng
    Zhang, Yiyun
    Li, Xiao
    Liu, Zhiqiang
    Guo, Enqing
    Yi, Xiaoyan
    Wang, Junxi
    Zhu, Hongwei
    Wang, Guohong
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (50)
  • [8] Improvement of leakage current and optical properties of GaN-based LEDs by chemical etching of p-GaN
    Park, Tae-Young
    Cho, Chang-Hee
    Park, Il-Kyu
    Park, Seong-Ju
    [J]. EIGHTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2008, 7058
  • [9] Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs
    Lu, Boyang
    Wang, Lai
    Hao, Zhibiao
    Luo, Yi
    Sun, Changzheng
    Han, Yanjun
    Xiong, Bing
    Wang, Jian
    Li, Hongtao
    Chen, Kaixuan
    Zhuo, Xiangjing
    Li, Jinchai
    Kang, Junyong
    [J]. APPLIED SCIENCES-BASEL, 2019, 9 (03):
  • [10] Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates
    Jeon, K. S.
    Kim, S. -W.
    Ko, D. -H.
    Ryu, H. Y.
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (07) : L1085 - L1088
12345