Complicated effects of nitrogen on the structural and optical properties of InAs(N)/GaAs quantum dots

被引：0
|
作者：
Ma, B. S. [1 ]
Faelth, J. F. [1 ]
Fan, W. J. [1 ]
Yoon, S. F. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
InAsN; quantum dots; photoluminescence; quantum size effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAs(N)/GaAs quantum dots were studied by x-ray diffraction, photoluminescence (PL) spectra, and atom force microscopy. Complicated blue shift in the PL peak energy with increasing nitrogen concentration was observed. This shift arises from the quantum size effect in the quantum dots, which dominates the nitrogen induced reductions of the InAsN band gap.
引用
收藏
页码：118 / 119
页数：2
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