Mid-infrared emission properties of Pr3+-doped Ge-Sb-Se-Ga-I chalcogenide glasses

被引:15
|
作者
Li, Mingming [1 ,2 ]
Xu, Yinsheng [1 ,2 ]
Jia, Xiaomeng [1 ,2 ]
Yang, Lei [1 ,2 ]
Long, Nengbing [1 ,2 ]
Liu, Zijun [1 ,2 ]
Dai, Shixun [1 ,2 ]
机构
[1] Ningbo Univ, Lab Infrared Mat & Devices, Res Inst Adv Technol, Ningbo 315211, Zhejiang, Peoples R China
[2] Key Lab Photoelect Mat & Devices Zhejiang Prov, Ningbo 315211, Zhejiang, Peoples R China
来源
OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 04期
基金
中国国家自然科学基金;
关键词
FIBER; CRYSTALLIZATION; BAND;
D O I
10.1364/OME.8.000992
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Owing to their various emission bands in the mid-IR region, Pr3+ ion-doped materials are expected to be a potential candidate as laser media. In this work, Pr3+ ion-doped Ge22Sb8Se70-2x(GaI)(x) (x = 1-5) chalcogenide glasses were prepared for investigation of the mid-IR spectroscopic properties. The glass structure and the optical, thermal, and luminescent properties were investigated. The 0.2-1.5 mol% Pr3+-doped Ge-Sb-Se-Ga-I bulk glass exhibited intense photoluminescence in the wavelength range of 3.5-5.5 mu m under 1.55 mu m light excitation. By heat treating the precursor glass at 30 degrees C above its glass transition temperature (T-g) for different durations, GeSe2 and Sb2Se3 nanocrystals were precipitated into the glass. After heat treatment, the 3.5-5.5 mu m emission intensity of glass enhanced and reached the maximum after 10 h of heat treatment. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
引用
收藏
页码:992 / 1000
页数:9
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