Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

被引：0
|
作者：
Vinokurov, D. A. [1 ]
Zorina, S. A. [1 ]
Kapitonov, V. A. [1 ]
Nikolaev, D. N. [1 ]
Stankevich, A. L. [1 ]
Shamakhov, V. V. [1 ]
Tarasov, I. S. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2006年 / 32卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063785006040079
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heterostructures comprising highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers have been grown by the metalorganic chemical vapor deposition method on InP(100) substrates. The photoluminescence spectra of these structures have been studied, and it is established that GaAs quantum wells form type-I heterojunctions with Al0.48In0.52As layers and type-II heterojunctions with Ga0.47In0.53As layers.
引用
收藏
页码：299 / 301
页数：3
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