Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

被引:9
|
作者
Zhang, H. J. [1 ,3 ]
Zheng, G. G. [1 ,2 ,3 ]
Chen, Y. Y. [1 ,2 ,3 ]
Xu, L. H. [1 ,2 ]
机构
[1] Nanjing Univ Informat Sci & Technol, Jiangsu Key Lab Optoelect Detect Atmosphere & Oce, Nanjing 210044, Jiangsu, Peoples R China
[2] Nanjing Univ Informat Sci & Technol, Jiangsu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China
[3] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Graphene-insulator-metal (GIM); Perfect absorption (PA); Thin film stacks; PHOTONIC CRYSTALS; PERFECT ABSORBER; LAYER; SURFACES;
D O I
10.1016/j.spmi.2018.03.040
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Broad band unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80 degrees. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:137 / 143
页数:7
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