Structural dependence of carrier capture time in semiconductor quantum-well lasers

被引：20
|
作者：
Hader, J [1 ]
Moloney, JV
Koch, SW
机构：
[1] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 03期
关键词：
D O I：
10.1063/1.1774271
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A fully microscopic model based on generalized quantum Bolzman equations for electron-electron and electron-phonon scattering is used to calculate the carrier capture dynamics in quantum-well lasers. The capture time and dynamics are governed by transitions between quantum states that are delocalized throughout the whole structure. Good agreement with experimental results is demonstrated for InGaPAs- and InGaAlAs-based multi-quantum-well systems. (C) 2004 American Institute of Physics.
引用
收藏
页码：369 / 371
页数：3
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