Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (vol 67, art no 041306, 2003) -: art. no. 129902

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作者：
Sun, YJ
Brandt, O
Cronenberg, S
Dhar, S
Grahn, HT
Ploog, KH
Waltereit, P
Speck, JS
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来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 12期
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D O I：
10.1103/PhysRevB.69.129902
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T [工业技术];
学科分类号：
08 ;
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  • [1] Nonpolar InxGa1-xN/GaN(1(1)over-bar-00) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy -: art. no. 041306
    Sun, YJ
    Brandt, O
    Cronenberg, S
    Dhar, S
    Grahn, HT
    Ploog, KH
    Waltereit, P
    Speck, JS
    [J]. PHYSICAL REVIEW B, 2003, 67 (04)
  • [2] Growth of nonpolar GaN(1(1)over-bar00) films and heterostructures by plasma-assisted molecular beam epitaxy
    Brandt, O
    Sun, YJ
    Ploog, KH
    [J]. GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 : 57 - 68
  • [3] Growth and Characterization of GaN/InxGa1-xN/InyAl1-yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
    Shih, Huei-Jyun
    Lo, Ikai
    Wang, Ying-Chieh
    Tsai, Cheng-Da
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    Lu, Yi-Ying
    Huang, Hui-Chun
    [J]. CRYSTALS, 2022, 12 (03)
  • [4] Theory of coherent acoustic phonons in InxGa1-xN/GaN multiple quantum wells -: art. no. 235316
    Sanders, GD
    Stanton, CJ
    Kim, CS
    [J]. PHYSICAL REVIEW B, 2001, 64 (23)
  • [5] Homogeneous AlGaN/GaN superlattices grown on free-standing (1(1)over-bar00) GaN substrates by plasma-assisted molecular beam epitaxy
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    Zakharov, Dmitri N.
    Edmunds, Colin
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    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (23)
  • [6] Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth -: art. no. 151918
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    Chakraborty, A
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    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
  • [7] Effect of uniaxial stress on photoluminescence in GaN and stimulated emission in InxGa1-xN/GaN multiple quantum wells -: art. no. 035328
    Ichimiya, M
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    [J]. PHYSICAL REVIEW B, 2003, 68 (03)
  • [8] Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy
    Waltereit, P
    Brandt, O
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    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2029 - 2031
  • [9] Strong carrier confinement in InxGa1-xN/GaN quantum dots grown by molecular beam epitaxy (vol 75, art no 045314, 2007)
    Senes, M.
    Smith, K. L.
    Smeeton, T. M.
    Hooper, S. E.
    Heffernan, J.
    [J]. PHYSICAL REVIEW B, 2007, 75 (12):
  • [10] Theory of coherent acoustic phonons in InxGa1-xN/GaN multiple quantum wells (vol B 64, art no 235316, 2001) -: art. no. 079903
    Sanders, GD
    Stanton, CJ
    Kim, CS
    [J]. PHYSICAL REVIEW B, 2002, 66 (07):
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