Voltage-balancing method for IGBTs connected in series

被引：88
|
作者：
Sasagawa, K [1 ]
Abe, Y
Matsuse, K
机构：
[1] Fuji Elect Adv Technol Co Ltd, Elect Technol Lab, Tokyo 1918502, Japan
[2] Meiji Univ, Dept Elect Engn, Kawasaki, Kanagawa 2148571, Japan
来源：
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2004年 / 40卷 / 04期
关键词：
device simulation; experiment result; insulated gate bipolar transistor (IGBT); series connection; voltage balance;
D O I：
10.1109/TIA.2004.830794
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper presents a new method for balancing voltages of series-connected insulated gate bipolar transistors (IGBTs). This method can be implemented only by adding simple circuits to the gate drive system of the IGBTs, and its effect of balancing the IGBT's collector-emitter voltages during the switching transients is remarkable. This principal strategy and experimental results with series-connected IGBTs are first described. After that, further experimental results are shown from the switching tests of four 2.5-kV flat-packaged IGBTs connected in series. Through the switching tests, superior characteristics of the proposed method have been confirmed.
引用
收藏
页码：1025 / 1030
页数：6
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