High quantum efficiency AlGaN/GaN solar-blind photodetectors grown by metalorganic chemical vapor deposition

被引：0

作者：

Chowdury, U ^{[1
]}

Wong, MM ^{[1
]}

Collins, CJ ^{[1
]}

Yang, B ^{[1
]}

Zhu, TG ^{[1
]}

Beck, AL ^{[1
]}

Campbell, JC ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

GAN AND RELATED ALLOYS-2001 | 2002年 / 693卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth, fabrication and characterization of back-illuminated AlGaN p-i-n photodetectors operating in the solar-blind wavelength range. A peak external quantum efficiency (EQE) of 45.5% (0.1 A/W) was obtained at a wavelength of 270 nm. This EQE was obtained at zero volt bias and without the use of any anti-reflection coating on the back of the substrate. To our knowledge, this is the highest EQE reported to date for p-i-n photodetectors operating in the solar-blind wavelength range.

引用

页码：817 / 822

页数：4

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