Formation of Solid Phase Epitaxial GeSn and Its Application to High-Performance N-MOSFETs and Low-Resistivity Contact

Single crystalline GeSn grown on Ge substrate by solid phase epitaxy was developed and employed as the platform to implement A1203 -gated N-MOSFETs. 02 plasma treatment was confirmed to be an effective avenue for surface passivation by forming GeSnOx. The passivation makes a DA as low as 1.62x 10" cm-2eV-1 and high peak mobility of 518 cm2/(Vs). To mitigate FL pinning on n-GeSn for low contact resistivity, 02 plasma treatment and formation of Yb stanogermanide on GeSn were respectively employed to suppress surface states. The significant FL depinning is evidenced by the LBN of 0.120.13 eV with pc less than 4.0X10-' c2-cm2. The promising processes gain an outlook on empowering high-performance GeSn devices.