Effective-mass theory of optical intersubband transitions in semiconductor quantum wells

被引：0
|
作者：
Takhtamirov, EE
Volkov, VA
机构：
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We applied the one-band EM Hamiltonian with corrections to the intersubband transitions in a conduction band quantum well. The matrix elements of the normal-incidence optical transitions were proved to be very small. Our results obtained in analytical form are in quantitative agreement with ones of numerical calculation.
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页码：663 / 666
页数：4
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