Strain-controlled electronic properties and magnetorelaxor behaviors in electron-doped CaMnO3 thin films

被引：14
|
作者：
Xiang, P. -H. [1 ,2 ]
Yamada, H. [1 ]
Sawa, A. [1 ]
Akoh, H. [1 ,2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
[2] CREST, Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期
关键词：
antiferromagnetic materials; calcium compounds; colossal magnetoresistance; doping; magnetic domains; magnetic epitaxial layers; magnetic impurities; magnetic transitions; neodymium compounds; INSULATOR-METAL TRANSITION; MAGNETORESISTANCE; MANGANITES; CR; PR0.5CA0.5MNO3;
D O I：
10.1063/1.3082091
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated epitaxial thin films of electron-doped manganite Ca1-xCexMnO3 (CCMO) with 0 <= x <= 0.08. The transport properties of CCMO films are very sensitive to substrate-controlled epitaxial strain. For the CCMO(x=0.05) film, the metallic transport characteristic is observed only on a nearly lattice-matched NdAlO3 (NAO) substrate, while tensilely and compressively stressed films are insulating. The CCMO(x=0.06) film on the NAO substrate shows a large magnetoresistance characteristic of a magnetorelaxor. This behavior can be explained in terms of the phase separation and the irreversible growth of the metallic domain in antiferromagnetic insulating matrix.
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页数：3
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