Ultrafast hot-carrier dynamics in semiconductor saturable absorber mirrors

被引：21
|
作者：
Joschko, M [1 ]
Langlois, P
Thoen, ER
Koontz, EM
Ippen, EP
Kolodziejski, LA
机构：
[1] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA
[2] MIT, Dept Phys, Cambridge, MA 02139 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期
关键词：
D O I：
10.1063/1.126039
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Femtosecond pump-probe experiments have been used to study the ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors. The relative contributions of absorption bleaching and induced absorption are investigated by varying the excitation fluence over more than four orders of magnitude, well beyond complete absorption saturation. Enhanced free carrier absorption due to highly excited carriers with an extended relaxation time of 2.8 ps dominates the differential reflectivity at ultrahigh fluences and has been studied via a two-color pump-probe measurement. (C) 2000 American Institute of Physics. [S0003-6951(00)02411-6].
引用
收藏
页码：1383 / 1385
页数：3
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