4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab

被引：0

作者：

Lee, Meng-Chia ^{[1
]}

Wang, Gangyao ^{[1
]}

Huang, Alex Q. ^{[1
]}

机构：

[1] N Carolina State Univ, NSF FREEDM Syst Ctr, Raleigh, NC 27695 USA

来源：

2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015) | 2015年

关键词：

4H-SiC; IGBT; modeling; high voltage;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A physics-based 15kV 4H-SiC n-IGBT sub-circuit model implemented in Simulink/Matlab is demonstrated in this work. Two-phase voltage ramp during the switching before and after punch through is well predicted. Simulated with a simple 4H-SiC Schottky diode model, the switching results is experimentally verified. The current bump during turn-off and current overshoot during turn-on are well-predicted and can be explained by the instantaneous output capacitances of the IGBT and Schottky diode. The computing speed for the full turn-on and off with stray inductance is approximately 2 minutes.

引用

页码：1051 / 1057

页数：7

共 8 条

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