Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

被引：88

作者：

Huang, Fei ^{[1
,2
,3
]}

Chen, Xing ^{[4
,5
]}

Liang, Xiao ^{[1
,2
,3
]}

Qin, Jun ^{[1
,2
,3
]}

Zhang, Yan ^{[1
,2
,3
]}

Huang, Taixing ^{[1
,2
,3
,6
]}

Wang, Zhuo ^{[2
]}

Peng, Bo ^{[1
,2
,3
]}

Zhou, Peiheng ^{[1
,2
,3
]}

Lu, Haipeng ^{[1
,2
,3
]}

Zhang, Li ^{[1
,2
,3
]}

Deng, Longjiang ^{[1
,2
,3
]}

Liu, Ming ^{[7
,8
]}

Liu, Qi ^{[7
]}

Tian, He ^{[4
,5
,8
]}

Bi, Lei ^{[1
,2
,3
,8
]}

机构：

[1] Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 610054, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Univ Elect Sci & Technol China, Minist Educ, Key Lab Multispectral Absorbing Mat & Struct, Chengdu 610054, Peoples R China

[4] Zhejiang Univ, Sch Mat Sci & Engn, Ctr Elect Microscopy, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[5] Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Peoples R China

[6] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[7] Chengdu Univ Informat Technol, Sichuan Prov Key Lab Informat Mat & Devices Appli, Chengdu 610225, Peoples R China

[8] IMECAS, Lab Nanofabricat & Novel Device Integrat, Key Lab Microelect Device & Integrated Technol, Beijing, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2017年 / 19卷 / 05期

基金：

新加坡国家研究基金会; 中国国家自然科学基金;

关键词：

SWITCHABLE POLARIZATION FATIGUE; LEAD-ZIRCONATE-TITANATE; FIELD-CYCLING BEHAVIOR; CAPACITORS; HFO2; SUPPRESSION; DIELECTRICS; ELECTRODES; ZRO2; SI;

D O I：

10.1039/c6cp07501k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2-based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 degrees C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

引用

页码：3486 / 3497

页数：12

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