Growth of well-oriented AlxIn1-xN films by sputtering at low temperature

被引：35
|
作者：
Dong, C. J. [1 ]
Xu, M. [1 ,2 ]
Chen, Q. Y. [1 ]
Liu, F. S. [3 ]
Zhou, H. P. [1 ]
Wei, Y. [1 ]
Ji, H. X. [1 ]
机构：
[1] Sichuan Normal Univ, Inst Solid State Phys, Lab Low Dimens Struct Phys, Chengdu 610068, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
[3] Panzhihua Univ, Res Ctr V Ti Mat, Panzhihua 617000, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 479卷 / 1-2期
关键词：
AlxIn1-xN film; Magnetron sputtering; Crystallinity; Resistance; MOLECULAR-BEAM EPITAXY; FUNDAMENTAL-BAND GAP; VAPOR-PHASE EPITAXY; OPTICAL-PROPERTIES; ENERGY; ALINN; INN; ALN; NANOWIRES; INXAL1-XN;
D O I：
10.1016/j.jallcom.2009.01.075
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
AlxIn1-xN films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the AlxIn1-xN films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E-g) of less than 2.41 eV. The sheet resistance of AlxIn1-xN film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：812 / 815
页数：4
相关论文
共 50 条
  • [1] RF SPUTTERING OF ALXIN1-XN THIN-FILMS
    STAROSTA, K
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1981, 68 (01): : K55 - K57
  • [2] Low-temperature deposition and characterization of AlXIn1-XN thin films
    Qiu, GH
    Olowolafe, JO
    Peng, T
    Unruh, KM
    Swann, CP
    Piprek, J
    III-V NITRIDES, 1997, 449 : 301 - 306
  • [3] Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering
    Zhao, Yang
    Wang, Hui
    Li, Xinzhong
    Li, Jingjie
    Shi, Zhifeng
    Wu, Guoguang
    Zhuang, Shiwei
    Yin, Chuanlei
    Yang, Fan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 102
  • [4] Synthesis and Characterization AlxIn1-xN Semiconductor Thin Films
    RamaMurthy, Vedam
    Srivani, Alla
    Veeraraghavaiah, G.
    JOURNAL OF ADVANCED PHYSICS, 2014, 3 (03) : 234 - 236
  • [5] Band gap bowing and refractive index spectra of polycrystalline AlxIn1-xN films deposited by sputtering
    Peng, T
    Piprek, J
    Qiu, G
    Olowolafe, JO
    Unruh, KM
    Swann, CP
    Schubert, EF
    APPLIED PHYSICS LETTERS, 1997, 71 (17) : 2439 - 2441
  • [6] Physical properties of AlxIn1-xN thin film alloys sputtered at low temperature
    Besleaga, C.
    Galca, A. C.
    Miclea, C. F.
    Mercioniu, I.
    Enculescu, M.
    Stan, G. E.
    Mateescu, A. O.
    Dumitru, V.
    Costea, S.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (15)
  • [7] Physical properties of AlxIn1-xN thin film alloys sputtered at low temperature
    Besleaga, C., 1600, American Institute of Physics Inc. (116):
  • [8] Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature
    Wang, Hui
    Zhao, Yang
    Li, Xinzhong
    Li, Jingjie
    Zhang, Ziming
    Wan, Shuai
    Gu, Weizhao
    Yang, Fan
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (04):
  • [9] The effect of AlN buffer layer on properties of AlxIn1-xN films on glass substates
    Yeh, Tung-Sheng
    Wu, Jenn-Ming
    Lan, Wen-How
    THIN SOLID FILMS, 2009, 517 (11) : 3204 - 3207
  • [10] Comparison of the Material Quality of AlxIn1-xN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering
    Sun, Michael
    Blasco, Rodrigo
    Nwodo, Julian
    de la Mata, Maria
    Molina, Sergio, I
    Ajay, Akhil
    Monroy, Eva
    Valdueza-Felip, Sirona
    Naranjo, Fernando B.
    MATERIALS, 2022, 15 (20)
12345