Two-layer responsivity modelling of HgCdTe photoconductive detectors

被引：0
|
作者：
Bhan, RK [1 ]
Dhar, V [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
OPTO-ELECTRONICS REVIEW | 2004年 / 12卷 / 02期
关键词：
HgCdTe photoconductive detectors; two-layer responsity model; shunt resistance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a simple two-layer responsivity model of n-HgCdTe photoconductive detectors by including the contribution of shunt resistance arising due to the accumulation layer at the surface. It is shown that in general responsivity of a proper two-layer model is higher than quasi two-layer model that is reponed in literature and used by many workers.
引用
收藏
页码：213 / 219
页数：7
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