Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

被引:52
|
作者
Jin, Sung Hun [1 ,2 ]
Shin, Jongmin [1 ,2 ]
Cho, In-Tak [1 ,2 ]
Han, Sang Youn [3 ,4 ]
Lee, Dong Joon [3 ]
Lee, Chi Hwan [3 ]
Lee, Jong-Ho [1 ,2 ]
Rogers, John A. [3 ]
机构
[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[4] Samsung Display Co, Display R&D Ctr, Yongin 446711, Gyeongki Do, South Korea
关键词
CONTACT RESISTANCE; CIRCUITS;
D O I
10.1063/1.4885761
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (similar to 5V) and with high gains (similar to 30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
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