Partial discharges phenomenon in high voltage power modules

被引：47
|
作者：
Lebey, Th.
Malec, D.
Dinculescu, S.
Costan, V.
Breit, F.
Dutarde, E.
机构：
[1] Univ Toulouse 3, CNRS, Lab Genie Elect, F-31062 Toulouse, France
[2] Alstom Transport, F-65600 Semeac, France
来源：
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2006年 / 13卷 / 04期
关键词：
partial discharges; power semiconductors switches; packaging;
D O I：
10.1109/TDEI.2006.1667740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Partial discharges measurements have been performed on 3.3 kV IGBT power modules. Results using both the normalized and a new proposed test are compared. The new test, allowing the detection of partial discharges in all the insulating materials, is detailed. Elementary defect patterns are used to distinguish the main cause (dies or insulating materials) of the observed partial discharges in IGBT modules.
引用
收藏
页码：810 / 819
页数：10
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