650 V Dispersion-Free Enhancement-Mode GaN-on-Si HEMTs Processed in a 200 mm CMOS Fab

被引：0

作者：

Kim, J. -Y. ^{[1
]}

Lee, D. ^{[1
]}

Kim, Y. S. ^{[1
]}

Son, J. ^{[1
]}

Luo, W. ^{[1
]}

Marcon, D. ^{[2
]}

Decoutere, S. ^{[2
]}

机构：

[1] Innosci Technol, Hagongda Rd, Zhuhai, GD, Peoples R China

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS) | 2017年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

650 V dispersion-free enhancement-mode GaN-on-Si p-GaN HEMTs are demonstrated in a 200 mm CMOS-compatible process, for the first time. The threshold voltage of 36 mm-width power devices is 2.1 V, the output current is 8 A, and the on-resistance is 13 Omega.mm. The manufacturing challenges when maturing the technology from the research and development phase to a production environment are discussed.

引用

页码：172 / 174

页数：3

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